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| Composite Transistors XN1872 Silicon N-channel * Enhancement MOS FET Unit: mm For switching 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 5 0.650.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Source-coupled FETs) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 4 0.95 3 2 0.3 -0.05 0.40.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SK621 x 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Drain to source voltage Rating Gate to source voltage of element Drain current Total power dissipation Overall Channel temperature Storage temperature Symbol VDSS VGSO ID IDM PT Tch Tstg (Ta=25C) Ratings 50 8 100 200 300 150 -55 to +150 Unit V V mA mA mW C C 1 : Drain (Tr1) 2 : Drain (Tr2) 3 : Gate (Tr2) 0 to 0.1 0.1 to 0.3 4 : Source 5 : Gate (Tr1) EIAJ : SC-74A Mini Type Pakage (5-pin) Marking Symbol: 5U Internal Connection 5 4 3 2 FET 1 1 FET 2 s Electrical Characteristics Parameter Drain to source voltage Drain current Gate cutoff current Gate threshold voltage Drain resistance Forward transfer admittance Output voltage high level Output voltage low level Input resistance Turn-on time Turn-off time Common source short-circuit input capacitance *1 *2 (Ta=25C) Symbol VDSS IDSS IGSS Vth RDS(on) | Yfs | VOH VOL R1+R2*1 ton*2 toff*2 Ciss VDD = 5V, VGS = 0 to 5V, RL = 200 VDD = 5V, VGS = 5 to 0V, RL = 200 VDS = 5V, VGS = 0, f = 1MHz 9 Conditions ID = 100A, VGS = 0 VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100A, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 1V, RL = 200 VDS = 5V, VGS = 5V, RL = 200 100 20 4.5 1.0 200 1.0 1.0 15 30 40 1.5 min 50 10 80 3.5 50 typ max Unit V A A V mS V V k s s pF Pulse measurement Resistance ratio R1/R2 = 1/50 +0.1 1.450.1 s Features 1 Composite Transistors PT -- Ta 500 120 Ta=25C XN1872 ID -- VDS 120 VDS=5V 100 VGS=6.0V 80 5.5V 5.0V 4.5V 40 ID -- VGS Total power dissipation PT (mW) 400 100 Drain current ID (mA) Drain current ID (mA) 80 Ta=-25C 25C 300 60 60 75C 200 4.0V 3.5V 3.0V 40 100 20 20 0 0 40 80 120 160 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs | -- VDS Forward transfer admittance |Yfs| (mS) VDS=5V Ta=25C Ciss, Coss -- VDS Common source short-circuit input capacitance, Ciss, Coss (pF) Common source short-circuit output capacitance 12 VGS=0 f=1MHz Ta=25C Ciss 8 120 RDS(ON) -- VGS ID=20mA 50 40 Drain resistance RDS(on) () 10 100 80 30 6 60 Ta=75C 40 20 4 Coss 2 25C -25C 10 20 0 0 2 4 6 8 10 0 0.1 0 0.3 1 3 10 30 100 0 2 4 6 8 10 Drain to source voltage VDS (V) Drain to source voltage VDS (V) Gate to source voltage VGS (V) VIN -- IO 1000 300 VO=1V Ta=25C Input voltage VIN (V) 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 10 30 100 Output current IO (mA) 2 |
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